preliminary data sheet no. pd60083- k features ? ? ? ? ? output power mosfets in half-bridge configuration ? ? ? ? ? high side gate drive designed for bootstrap operation ? ? ? ? ? bootstrap diode integrated into package (hd type) ? ? ? ? ? accurate timing control for both power mosfet s matched delay to get 50% duty cycle matched deadtime of 1.2us ? ? ? ? ? internal oscillator with programmable frequency self-oscillating half bridge ? ? ? ? ? 15.6v zener clamped vcc for offline operation ? ? ? ? ? half-bridge output is out of phase with r t ? ? ? ? ? micropower startup description the ir51h(d)xxx are complete high voltage, high speed, self- oscillating half-bridge circuits. proprietary hvic and latch im- mune cmos technologies, along with the hexfet ? power mosfet technology, enable ruggedized single package construc- tion. the front-end features a programmable oscillator which func- tions similar to the cmos 555 timer. the supply to the control circuit has a zener clamp to simplify offline operation. the output features two hexfets in a half-bridge configuration with an in- ternally set deadtime designed for minimum cross-conduction in the half-bridge. propagation delays for the high and low side v in (max) 250v (ir51h(d)224) 400v (ir51h(d)320) 500v (ir51h(d)420) duty cycle 50% deadtime 1.2 s r ds(on) 1.1 ? (ir51h(d)224) 3.0 ? (ir51h(d)320) 3.6 ? (ir51h(d)420) p d (t a = 25 o c ) 2.0w package typical connection product summary f = + 1 14 r 75 c tt . ( ) ? 1 d1 2 3 4 6 7 9 vcc com vo v in v b ir51h(d)xxx vin com to, load dc bus r t c t r t c t external fast recovery diode d1 is not required for hd type ir51h(d)224 ir51h(d)320 ir51h(d)420 power mosfets are matched to simplify use in 50% duty cycle applications. the device can operate up to 500 volts. (note: for new designs, we recommend the ir53h(d)420-p) 9-lead sip without leads 5 and 8
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) note 1: this ic contains a zener clamp structure between v cc and com which has a nominal breakdown voltage of 15.6v. please note that this supply pin should not be driven by a dc, low impedance power source greater than the v clamp specified in the electrical characteristics section symbol definition minimum maximum units v in high voltage supply -224 - 0.3 250 -320 - 0.3 400 -420 - 0.3 500 v b high side floating supply vo - 0.3 vo +2.5 v o half-bridge output -0.3 v in + 0.3 v rt r t voltage - 0.3 v cc + 0.3 v ct c t voltage - 0.3 v cc + 0.3 i cc supply current (note 1) ? 25 i rt r t output current - 5 5 dv/dt peak diode recovery ? 3.5 v/ns p d package power dissipation @ t a +25c ? 2.00 w rth ja thermal resistance, junction to ambient ? 60 o c/w t j junction temperature -55 150 t s storage temperature -55 150 t l lead temperature (soldering, 10 seconds) ? 300 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ma o c v
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation, the device should be used within the recommended conditions. symbol definition minimum maximum units v b high side floating supply absolute voltage v o + 10 v o + v clamp v in high voltage supply -224 ? 250 -320 ? 400 -420 ? 500 v o half-bridge output voltage -3.0 (note 2) v in i d continuous drain current (t a = 25c) -224 ? 1.1 -320 ? 0.9 -420 ? 0.7 (t a = 85c) -224 ? 0.7 -320 ? 0.6 -420 ? 0.5 i cc supply current (note 3) 5 ma t a ambient temperature -40 125 c
dynamic electrical characteristics v bias (v cc , v bs ) = 12v, t a = 25 o c unless otherwise specified. symbol definition min. typ. max. units test conditions t rr reverse recovery time (mosfet body diode) -224 ? 200 ? -320 ? 270 ? -420 ? 240 ? q rr reverse recovery charge (mosfet body diode) -224 ? 0.7 ? -320 ? 0.6 ? -420 ? 0.5 ? dr t duty cycle ? 50 ? % fosc = 20 khz i f =1.1a i f =900ma i f =700ma i f =1.1a i f =900ma i f =700ma ns c di/dt =100 a/ s note 2: care should be taken to avoid switching conditions where the v s node flies inductively below ground by more than 5v. note 3: enough current should be supplied to the v cc lead of the ic to keep the internal 15.6v zener diode clamping the voltage at this lead.
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) symbol definition min. typ. max. units test conditions v ccuv+ v cc supply undervoltage positive going ? 8.4 ? v threshold v ccuv- v cc supply undervoltage negative going ? 8.0 ? v threshold i qcc quiescent v cc supply current ? 300 ? a v cc > v ccuv v clamp v cc zener shunt clamp voltage ? 15.6 ? v i cc = 5ma i qbs quiescent v bs supply current ? 30 ? l os offset supply leakage current ? ? 50 v b = v in = 500v f osc oscillator frequency ? 20 ? r t = 35.7 k ? c t = 1 nf ? 100 ? r t = 7.04 k ? c t = 1 nf i ct c t input current ? 0.001 1.0 a v ctuv c t undervoltage lockout ? 100 ? note 2 v rt+ r t high level output voltage, v cc - r t ? 20 ? i rt = 100a ? 200 ? i rt = -1ma v rt- r t low level output voltage ? 20 ? i rt = 100a ? 200 ? i rt = -1ma v rtuv r t undervoltage lockout, v cc - r t ? 100 ? i rt = 100a v ct+ 2/3 v cc threshold ? 8.0 ? v ct- 1/3 v cc threshold ? 4.0 ? static electrical characteristics v bias (v cc , v b ) = 12v, t a = 25 o c unless otherwise specified. rds(on) static-drain-to-source on-resistance -224 ? 1.1 ? -320 ? 1.8 ? -420 ? 3.0 ? v sd diode forward voltage -224 ? 0.85 ? -320 ? 0.7 ? -420 ? 0.8 ? i f =1.1a i f =900ma i f =700ma i f =1.1a i f =900ma i f =700ma v ? khz a khz mv di/dt =100 a/ s
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) functional block diagram ir2151 d1 vin v b com vo vcc r t c t irfcxxx irfcxxx 1 2 3 4 6 7 9 fast recovery diode d1 is incorporated in ir51hdxxx only h o v s l o symbol lead description v cc logic and internal gate drive supply voltage. an internal zener clamp diode at 15.6 v norminal is included to allow the v cc to be current fed directly from vin typically by means of a high value resistor. r t oscillator timing resistor output; a resistor is connected from r t to c t . rt is out of phase with the half- bridge output (vo). c t oscillator timing capacitor input; a capacitor is connected from c t to com in order to program the oscillator frequency according to the following equation: c t pin also invokes shutdown function (see note 2) where 75 ? is the effective impedence of the r t output stage. v b high side gate drive floating supply. for bootstrap operation a high voltage fast recovery diode is needed to feed from v cc to v b . (hd type circuits incorporate this diode). v in high voltage supply vo half bridge output com logic and low side of half bridge return lead definitions f = + 1 14 r 75 c tt . ( ) ?
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) figure 1. input/output timing diagram lead assignments 1v cc 6 v b 2r t 7 vo 3c t 9 v in 4 com 9 7 6 4 3 2 1 9-lead sip without leads 5 and 8 v+ 0 vo r t c t vcc vccuv+ v clamp
ir51h(d)224 ir51h(d)320 ir51h(d)420 (note: for new designs, we recommend the ir53h(d)420-p) notes: 1. dimensioning and tolerancing per ansi y14.5m-1982 2. controlling dimension: inch 3. dimensions are shown in millimeters (inches) case outline world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 http://www.irf.com/ data and specifications subject to change without notice. 5/14/2001 9-lead sip w/o leads 5 and 8
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